2SD2137 transistor (npn) features power dissipation p cm : 2 w (tamb=25 ) collector current i cm : 3 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 1 ma, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 30 ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e = 1 ma, i c =0 6 v collector cut-off current i cbo v cb = 60 v, i e =0 100 a emitter cut-off current i ebo v eb = 6 v, i c =0 100 a h fe(1) v ce = 4 v, i c = 1 a 70 320 dc current gain h fe(2) v ce = 4 v, i c = 3 a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 375 ma 1.2 v base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v transition frequency f t v ce = 5 v, i c = 0.2 a, f= 10 mhz 30 mhz turn-on time t on 0.3 s storage time t stg 2.5 s switch time fall time t f v cc =50v, i c =1a, i b1 =0.1a, i b2 =-0.1a 0.2 s classification of h fe(1) rank q p o range 70-150 120-250 160-320 1 2 3 to-220 1. base 2. collector 3. emitter 2SD2137 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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